| 摘要 |
A ZnO-based semiconductor element by which a flat ZnO-based semiconductor layer can be grown on an MgZnO substrate having a major surface on the lamination side directed in the direction of c-axis. On an MgxZn1-xO (0<=x<1) substrate (1) having +C face (0001) inclining at least in the direction of m-axis as a major surface, ZnO-based semiconductor layers (2-6) are grown epitaxially. A p-electrode (8) is formed on the ZnO-based semiconductor layer (5), and an n-electrode (9) is formed on the underside of the MgxZn1-xO substrate (1). When steps arranged regularly in the direction of m-axis are formed on the surface of the MgxZn1-xO substrate (1), a phenomenon called step bunching is prevented and planarity of the film of semiconductor layers laminated on the substrate (1) can be enhanced.
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