METHOD OF FORMING A THIN FILM AND LUMINESCENCE DEVICE

摘要

A method for manufacturing a thin film and a light emitting device are provided to prevent deep level discharge of a ZnO thin film by forming the ZnO thin film doped with the In2O3. After a ZnO target doped with the impurity is loaded in a pulse laser deposition chamber, a substrate is loaded. The ZnO thin film doped with the impurity is formed on the substrate by irradiating the pulse laser to the target. The impurity includes In2O3. The In2O3 includes indium of 0.1 to 0.5 at. %.