发明名称 |
Power semiconductor module |
摘要 |
An object is to obtain long-term reliability of an electric connection in a power semiconductor module. In a power semiconductor module, the main circuit interconnection directly connected to a power semiconductor chip (3) is formed of a busbar (6) and the power semiconductor chip (3) and the busbar electrode (6a) of the busbar (6) are electrically connected through a conductive resin (12). A member (13) having lower thermal expansion than the busbar electrode (6a) is joined to the busbar electrode (6a) in the part adjacent to said power semiconductor chip (3). <IMAGE> |
申请公布号 |
EP1009026(B1) |
申请公布日期 |
2009.03.04 |
申请号 |
EP19990124238 |
申请日期 |
1999.12.03 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KIKUCHI, TAKUMI;FUJIOKA, HIROFUMI;KIKUNAGA, TOSHIYUKI;MUTO, HIROTAKA |
分类号 |
H01L23/36;H01L23/495;H01L21/60;H01L23/051;H01L23/48 |
主分类号 |
H01L23/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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