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发明名称
METHOD OF CONTROLLING FILM STRESS IN MEMS DEVICES
摘要
A structural film, typically of silicon, in MEMS or NEMS devices is fabricated by depositing the film in the presence of a gas other than nitrogen, and preferably argon as the carrier gas.
申请公布号
US2009029533(A1)
申请公布日期
2009.01.29
申请号
US20070829646
申请日期
2007.07.27
申请人
DALSA SEMICONDUCTOR INC.
发明人
FORTIN VINCENT;OUELLET LUC
分类号
H01L21/20
主分类号
H01L21/20
代理机构
代理人
主权项
地址
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