发明名称 METHOD OF CONTROLLING FILM STRESS IN MEMS DEVICES
摘要 A structural film, typically of silicon, in MEMS or NEMS devices is fabricated by depositing the film in the presence of a gas other than nitrogen, and preferably argon as the carrier gas.
申请公布号 US2009029533(A1) 申请公布日期 2009.01.29
申请号 US20070829646 申请日期 2007.07.27
申请人 DALSA SEMICONDUCTOR INC. 发明人 FORTIN VINCENT;OUELLET LUC
分类号 H01L21/20 主分类号 H01L21/20
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