| 发明名称 |
FILM FORMING METHOD FOR A SEMICONDUCTOR |
| 摘要 |
<p>The present invention may be a semiconductor device including of a fluorinated insulating film and a SiCN film deposited on the fluorinated insulating film directly, wherein a density of nitrogen in the SiCN film decreases from interface between the fluorinated insulating film and the SiCN film. In the present invention, the SiCN film that is highly fluorine-resistant near the interface with the CFx film and has a low dielectric constant as a whole can be formed as a hard mask.</p> |
| 申请公布号 |
WO2009014748(A1) |
申请公布日期 |
2009.01.29 |
| 申请号 |
WO2008US09044 |
申请日期 |
2008.07.24 |
| 申请人 |
MATSUOKA, TAKAAKI;TOKYO ELECTRON LIMITED;KAWAMURA, KOHEI |
发明人 |
MATSUOKA, TAKAAKI;KAWAMURA, KOHEI |
| 分类号 |
H01L21/314;H01L21/768 |
主分类号 |
H01L21/314 |
| 代理机构 |
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| 主权项 |
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