METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide: a method for manufacturing an SOI substrate with favorable adherence without high-temperature heat treatment being performed in bonding; a semiconductor device using the SOI substrate: and a manufacturing method thereof.

SOLUTION: The SOI substrate and semiconductor device can be manufactured by forming a single-crystalline silicon substrate with a thickness of 50μm or less in which an ion implanted layer is formed; forming a substrate having an insulating layer over a surface; activating at least one of the surfaces of the single-crystalline silicon substrate and the insulating layer by exposure to a plasma atmosphere or an ion atmosphere; and bonding the single-crystalline silicon substrate and the substrate with the insulating layer interposed therebetween. Here, a silicon oxide layer formed by chemical vapor deposition using silane-based gas can be used as the insulating layer. Further, a laminated film of the silicon oxide layer formed by the chemical vapor deposition using silane-based gas and a nitrogen-containing layer may be used as the insulating layer.

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