发明名称 SUBSTRATE PROCESSING DEVICE AND HEATING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a new structure of a heating device capable of improving the responsiveness. SOLUTION: This substrate processing device is provided with a reaction vessel for processing a substrate and a heating device for heating the substrate in the reaction vessel. The heating device has an inner layer 50 of a sidewall, a middle layer 60 of the sidewall and an outer layer 70 of the sidewall, at least the inner layer 50 of the sidewall and the middle layer 60 of the sidewall have electrical conductivity, and the inner layer 50 of the sidewall holds a heating element 20. The middle layer 60 of the sidewall is fixed from the outside with a first fastening member 54 via an insulating member 51 fixed to the inner layer 50 of the sidewall. A second fastening member 71, fixed from the outside of the outer layer 70 of the sidewall for preventing the first fastening member 54 from dropping off, is provided at a position where it overlaps the first fastening member 54. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009004715(A) 申请公布日期 2009.01.08
申请号 JP20070167004 申请日期 2007.06.25
申请人 HITACHI KOKUSAI ELECTRIC INC;TEITOKUSHA KK 发明人 HAYASHIDA AKIRA;NAKAJIMA MASAYO;UENO MASAAKI;SHIMADA SHINICHI;KITAMURA KIMIO;TANAKA KENJI;NISHIHARA JUNICHI
分类号 H01L21/31;H01L21/22;H01L21/324 主分类号 H01L21/31
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