发明名称 Flash Memory and Methods of Fabricating Flash Memory
摘要 Flash memory and methods of fabricating flash memory are disclosed. A disclosed method comprises: forming a first floating gate; and extending the first floating gate by forming a second floating gate adjacent a first sidewall of the floating gate. The second floating gate extends upward above the first floating gate. The method also includes depositing a dielectric layer on the first floating gate and the second floating gate; and forming a control gate on the dielectric layer.
申请公布号 US2009011588(A1) 申请公布日期 2009.01.08
申请号 US20080202163 申请日期 2008.08.29
申请人 KIM BONG KIL 发明人 KIM BONG KIL
分类号 H01L21/28;H01L21/336;H01L21/8247;H01L27/115;H01L29/423 主分类号 H01L21/28
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