发明名称 |
Flash Memory and Methods of Fabricating Flash Memory |
摘要 |
Flash memory and methods of fabricating flash memory are disclosed. A disclosed method comprises: forming a first floating gate; and extending the first floating gate by forming a second floating gate adjacent a first sidewall of the floating gate. The second floating gate extends upward above the first floating gate. The method also includes depositing a dielectric layer on the first floating gate and the second floating gate; and forming a control gate on the dielectric layer.
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申请公布号 |
US2009011588(A1) |
申请公布日期 |
2009.01.08 |
申请号 |
US20080202163 |
申请日期 |
2008.08.29 |
申请人 |
KIM BONG KIL |
发明人 |
KIM BONG KIL |
分类号 |
H01L21/28;H01L21/336;H01L21/8247;H01L27/115;H01L29/423 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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