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发明名称
3D R/W CELL WITH REDUCED REVERSE LEAKAGE AND METHOD OF MAKING THEREOF
摘要
A nonvolatile memory device includes a semiconductor diode steering element, and a semiconductor read / write switching element.
申请公布号
WO2009005614(A2)
申请公布日期
2009.01.08
申请号
WO2008US07758
申请日期
2008.06.23
申请人
SANDISK 3D LLC;KUMAR, TANMAY;PETTI, CHRISTOPHER, J.
发明人
KUMAR, TANMAY;PETTI, CHRISTOPHER, J.
分类号
G11C13/00;H01L27/24;H01L45/00
主分类号
G11C13/00
代理机构
代理人
主权项
地址
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