METHOD FOR PRODUCING SOI WAFER

摘要

The present invention is a method for producing an SOI wafer comprising at least a step of forming an ion-implanted damaged layer by ion-implanting a neutral element electrically inactive in silicon from one surface of the base wafer or the bond wafer, in which ion-implanting in the step of forming the ion-implanted damaged layer is performed at a dosage of 1x10 12 atoms/cm 2 or more and less than 1x10 15 atoms/cm 2 .As a result, there may be provided a method for producing an SOI wafer having sufficient gettering ability while the suppression of leak failure, degradation of oxide dielectric breakdown voltage or the like is provided.