TUNNEL MAGNETORESISTIVE THIN FILM AND MAGNETIC MULTILAYER FORMATION APPARATUS

摘要

This invention provides a tunnel magnetoresistive thin film which, while maitaining a thin film form of an Ru layer used as a nonmagnetic layer for switched connection, can improve heat resistance, can realize good development of a switched connection magnetic field by an Ru layer even upon annealing at elevated temperatures, and has a high MR ratio. In the tunnel magnetoresistive thin film, at least one of a first magnetization fixed layer (4) and a second magnetization fixed layer (6) stacked on top of each other through a nonmagnetic layer (5) for switched connection has a laminated structure comprising two or more layers formed of respective magnetic materials different from each other.