| 摘要 |
<p>Provided is a semiconductor device manufacturing method comprising a first step of forming a first wiring line (28a) over a semiconductor substrate (10), a second step of forming storage elements (30) over the first wiring line, a third step of so forming a first insulating film (42) over the semiconductor substrate as to bury the storage elements, a fourth step of forming such a second insulating film (44) over the first insulating film and the storage elements as has etching characteristics different from those of the first insulating film, a fifth step of etching the second insulating film by using the first insulating film as an etching stopper, thereby to form such grooves (46) in the second insulating film as to expose the upper portions of the storage elements, and a sixth step of burying second wiring lines (32a) in the grooves.</p> |
