| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to prevent gap between an electrode for fixing electric potential and the wall of groove as an electrode for fixing electric potential is spread in order to be wider than the groove width in a first main surface. A semiconductor device comprises a semiconductor substrate(1), a device, a electrode for fixing electric potential and a first main electrode. The semiconductor substrate has a first main surface. The semiconductor substrate has grooves(1a,1b) upon the first main surface. The device has an insulated gate type field effect part including a gate electrode formed in the first main surface. The electrode for fixing electric potential reclaims the groove. The electrode for fixing electric potential has a protrusion part which is spread in the first main surface in order to become wider than the width of groove. The first main electrode is formed on the first main surface. The first main electrode is electrically insulated with the gate electrode. The first main electrode is connected to the upper side whole of the protrusion of the electrode for fixing electric potential.</p> |
