发明名称 |
Sputtertargetaufbau |
摘要 |
To provide a sputtering target structure which has good machinability and thermal conductivity and has good wettability with soldering materials, which is inexpensive and can be used repeatedly for a long period of time, and which is free from problems of cracking and peeling of the sputtering target therein, a sputtering target structure is formed by bonding a sputtering target and a backing plate. The backing plate is formed of a material that has the difference in the linear expansion coefficient between it and the sputtering target material of at most 2x10-6/K, and a copper plate having a thickness of from 0.3 to 1.5 mm is disposed on at lest one face of the backing plate. |
申请公布号 |
DE112006003537(T5) |
申请公布日期 |
2008.12.24 |
申请号 |
DE20061103537T |
申请日期 |
2006.12.27 |
申请人 |
ADVANCED MATERIAL TECHNOLOGY CO. LTD.;KUNIYA, TSUTOMU |
发明人 |
KUNIYA, TSUTOMU;SUZUKI, NOBUYUKI;TERASHI, AKIRA |
分类号 |
C23C14/34;C22C49/06;C22C101/04;C22C101/10;C22C101/14;C22C101/18;C22C101/22 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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