发明名称 Sputtertargetaufbau
摘要 To provide a sputtering target structure which has good machinability and thermal conductivity and has good wettability with soldering materials, which is inexpensive and can be used repeatedly for a long period of time, and which is free from problems of cracking and peeling of the sputtering target therein, a sputtering target structure is formed by bonding a sputtering target and a backing plate. The backing plate is formed of a material that has the difference in the linear expansion coefficient between it and the sputtering target material of at most 2x10-6/K, and a copper plate having a thickness of from 0.3 to 1.5 mm is disposed on at lest one face of the backing plate.
申请公布号 DE112006003537(T5) 申请公布日期 2008.12.24
申请号 DE20061103537T 申请日期 2006.12.27
申请人 ADVANCED MATERIAL TECHNOLOGY CO. LTD.;KUNIYA, TSUTOMU 发明人 KUNIYA, TSUTOMU;SUZUKI, NOBUYUKI;TERASHI, AKIRA
分类号 C23C14/34;C22C49/06;C22C101/04;C22C101/10;C22C101/14;C22C101/18;C22C101/22 主分类号 C23C14/34
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