SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To solve the problem that it has been difficult to form a high-resistance element made of polysilicon which can stably keep the resistance value high while having high relative accuracy characteristics. SOLUTION: A second insulation film 4 is formed on the high-resistance element 3 made of polysilicon formed on a first insulation film 2. On the second insulation film 4, a hydrogen diffusion-preventing film 5 made of a material having a hydrogen diffusion coefficient smaller than that in the second insulation film 4 is formed in such a shape as to cover a part of the high-resistance element 3. COPYRIGHT: (C)2008,JPO&INPIT