| 摘要 |
A method for forming a trench includes providing a substrate, and forming the trench in the substrate using a gas containing chlorine (Cl<SUB>2</SUB>) gas as a main etch gas and SiF<SUB>X </SUB>gas as an additive gas, wherein a sidewall of the trench has a substantially vertical profile by virtue of reaction of the Cl<SUB>2 </SUB>gas and the SiF<SUB>X </SUB>gas.
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