SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

A treating agent for silicon dielectrics which is for use after etching, the treating agent comprising: at least one nitrogenous substance selected from the group consisting of ammonia type bases and amine compounds; an acid; and at least one silicon-containing compound comprising silicon, carbon, and hydrogen. It optionally contains a surfactant. With the agent, a silicon dielectric can be inhibited from being increased in permittivity by etching.