| 摘要 |
<p>A random number generating device includes a semiconductor device including a source region (16a), a drain region (16b), a channel region provided between the source region and the drain region, and an insulating portion provided on the channel region, the insulating portion including a trap insulating film (13) having traps based on dangling bonds and expressed by Six(SiO2)y(Si3N4)1-yMz (M is an element other than Si, O, and N, x ≥ 0, 1 ≥ y ≥ 0, z ≥ 0, the case where x = 0 and y = 1 and z = 0 is excluded), conductivity of the channel region varying randomly depending on the amount of charge caught in the traps, and a random number generating unit connected to the semiconductor device and generating random numbers based on a random variation in the conductivity of the channel region.
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