VOLTAGE GENERATING CIRCUIT AND CIRCUIT FOR GENERATING REFERENCE VOLTAGE OF SEMICONDUCTOR MEMORY APPARATUS USING THE SAME

摘要

A voltage generating circuit and a reference voltage generating circuit of a semiconductor memory device using the same are provided to discriminate data using a reference voltage corresponding to a middle level of a high level and a low level of data. A voltage generating circuit of a semiconductor memory device includes a data logic voltage generation unit(100). The data logic voltage generation unit generates an internal data logic voltage with an equal level to the potential level of row data, by dividing an external voltage with combination of an impedance of a data output unit(30) and an impedance due to an on die termination signal when the external data output unit of the semiconductor memory device outputs the row data. The data logic voltage generation unit includes a first impedance part and a logic voltage generation part. The first impedance part determines impedance in response to the on die termination signal. The logic voltage generation part generates the internal data logic voltage with an equal level to an external data logic voltage by comparing the external data logic voltage with the internal data logic voltage.