发明名称 Class D amplifier assembly
摘要 <p>The arrangement (10) has a half bride that is formed from two switched elements (11, 12) i.e. metal oxide semiconductor field effect transistors (MOSFETs), where the switched elements are switched in series. The half bridge has two supply voltage connections (18, 19), and an outlet connection (24) lies between the two switched elements. A bypass condenser (20) is provided parallel to serial switching of the switched elements, where current path through the switched elements and the bypass condenser exhibits a length less than or equal to 10 centimeter.</p>
申请公布号 EP1968188(A1) 申请公布日期 2008.09.10
申请号 EP20070004878 申请日期 2007.03.09
申请人 HUETTINGER ELEKTRONIK GMBH + CO. KG 发明人 KIRCHMEIER, THOMAS;GLUECK, MICHAEL;HINTZ, GERD, DR.
分类号 H01L23/34;H01J37/32;H01L23/373;H01L23/64;H01L25/00;H01L25/04;H01L25/07;H01L25/16;H03F3/217;H05H1/36;H05H1/46 主分类号 H01L23/34
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