| 摘要 |
<p>PURPOSE: A method for forming a semiconductor pattern is provided to improve a process margin and the accuracy of a pattern formed on a wafer by adding a rule about incline data of a transfer pattern to optical proximity correction technology. CONSTITUTION: A target pattern(100) is designed. A sample mask with the target pattern is manufactured. The target pattern is transferred on the wafer using a sample mask. Incline data is determined according to a specific position of the transfer pattern which is transferred on the wafer. Mask data is processed by applying a rule about the incline data.</p> |
