METHOD OF FORMING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A formation method of a semiconductor device is provided to prevent an impurity from being slipped out of an active area by forming a barrier layer along the surface of a trench after forming a trench. CONSTITUTION: A semiconductor substrate(400) in which a trench(TC) is formed is provided. A liner insulating layer is formed along the surface of the trench. The liner insulating layer is transformed into a barrier layer(410) by executing a nitridation process in order to prevent an impurity from being slipped out of the semiconductor substrate. The liner insulating layer is formed by an oxide film. The barrier layer is formed by a nitride film.