| 摘要 |
FIELD: metallurgy. ^ SUBSTANCE: several targets (8A, 8B, 8C, 8D) are located in vacuum so that to be electrically undependable from each other and sputtering is implemented by means of creation of magnetron discharge nearby targets (8A, 8B, 8C, 8D). During sputtering to adjacent targets (8A, 8B, 8C, 8D) there are alternately applied voltages, allowing phase difference 180 degrees, with specific temporal profile. ^ EFFECT: reduction of anomalous discharge on surface of target and blur-free areas, caused deposit of target material. ^ 7 cl, 6 dwg, 2 ex |
