Semiconductor device with a cavity between a field effect transistor and a protective film and corresponding manufacturing method

摘要

A semiconductor device and a fabrication method for the semiconductor device which can remove the sacrifice layer deposited on the semiconductor device surface in a short time and whose manufacturing yield can be improved are provided. The semiconductor device and the fabrication method for the semiconductor device includes a field effect transistor (4) including a gate electrode (1), a drain electrode (2), and a source electrode (3) formed on a semiconductor substrate (4A); and a hollow protective film (5) for covering the gate electrode (1), the drain electrode (2), and the source electrode (3), and being provided on the semiconductor substrate (4A). The hollow protective film (5) includes a 1st cap layer (7); a second cap layer (10) placed on the first cap layer (7); a plurality of openings (12) formed on the position of the first cap layer (7) of the upper part of the drain electrode (2) and the source electrode (3); a sealed part (12A) for sealing the openings (12) by the second cap layer (10), wherein oxygen plasma is supplied through the openings (12), and ashing removal of the sacrifice layer (6) is performed.