发明名称 CHEMICAL VAPOR DEPOSITION APPARATUS
摘要 PURPOSE: A chemical vapor deposition apparatus is provided to reduce equipment investment and manufacturing cost according to the reduction of a processing stage. CONSTITUTION: A chemical vapor deposition apparatus(17) comprises a chamber(1), a device for supplying reaction gas(8), a wafer chuck(2), and a heater module(14). The device for supplying reaction gas is arranged at the inner upper end of the chamber. The device for supplying reaction gas provides the reaction gas. The wafer chuck is faced to the device for supplying reaction gas. The wafer chuck is arranged in the inner lower end of the chamber. The heater module is arranged between the device for supplying reaction gas and the wafer chuck. The heater module heats the wafer arranged in the wafer chuck.
申请公布号 KR20090105090(A) 申请公布日期 2009.10.07
申请号 KR20080030346 申请日期 2008.04.01
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, JAE KI
分类号 C23C16/46;C23C16/00 主分类号 C23C16/46
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