| 摘要 |
<p>PURPOSE: A method for forming a semiconductor is provided to prevent a cell punch through by forming a polysilicon layer in a source/drain region and a gate after forming a recess by etching the silicon layer until a lower insulation layer is exposed. CONSTITUTION: An insulation layer(210) is formed on a semiconductor substrate(200). A device isolation layer for defining an active area(220) is formed on the insulation layer. A hard mask layer pattern for defining a source/drain area is formed in the active area. The source/drain area is formed and the insulation layer is exposed by etching the active area using the hard mask layer pattern as the mask. After removing the hard mask layer pattern, a gate oxide layer(260), a gate electrode(270), and a hard mask layer(280) are formed on the whole surface. A gate(290) is formed by etching the hard mask layer and the gate electrode. The gate oxide layer is removed on the surface of the source/drain area. A polysilicon layer(310) is formed on the source/drain area.</p> |
