发明名称 MAGNETIC RANDOM ACCESS MEMORY DEVICE AND DATA RECORDING METHOD
摘要 PURPOSE: A magnetic random access memory using a domain wall motion and current induction magnetic switching method is provided to improve integration by implementing the driving with only the write current of one direction. CONSTITUTION: A magnetic random access memory includes a switch structure(11), a data storing layer(13), a free layer(15), an intermediate electrode(12), an intermediate layer(14). The data storing layer is formed on the switch structure. The free layer is formed on the data storing layer. Two magnetic domains with difference magnetization direction or more are formed in the free layer. The intermediate electrode is formed between the switch structure and the data storing layer. The intermediate layer is formed between the data storing layer and the free layer.
申请公布号 KR20090105733(A) 申请公布日期 2009.10.07
申请号 KR20080031363 申请日期 2008.04.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG, IN JUN;KIM, KWANG SEOK;SEO, SUN AE;KIM, KEE WON
分类号 G11C11/15 主分类号 G11C11/15
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