| 摘要 |
MOS structures (100, 200) that exhibit lower contact resistance and methods for fabricating such MOS structures are provided. In one method, a semiconductor substrate (106) is provided and a gate stack (146) is fabricated on the semiconductor substrate. An impurity-doped region (116) within the semiconductor substrate aligned with the gate stack is formed. Adjacent contact fins (186) extending from the impurity-doped region are fabricated and a metal suicide layer (126) is formed on the contact fins. A contact (122) to at least a portion of the metal suicide layer on at least one of the contact fins is fabricated. |
