| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provide to increase the contact area between a landing plug and a contact plug by forming the contact plug to cover the protruded upper side of the landing plug. CONSTITUTION: A plurality of gates(G) is formed on a semiconductor substrate(100). A landing plug(116) is formed between gates on the semiconductor substrate. The upper side of the landing plug is protruded. A contact plug(120) is formed to cover the protruded upper side of the landing plug. The gate includes a hard mask(HM) which included a stacked of an oxide layer(108) and a nitride layer.
|
