发明名称 |
CRYSTAL ION-SLICING OF SINGLE-CRYSTAL FILMS |
摘要 |
A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal structure, and chemically etching the damage layer to effect detachment the single-crystal film from the crystal structure. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures. |
申请公布号 |
EP1060509(B1) |
申请公布日期 |
2005.09.21 |
申请号 |
EP19990905835 |
申请日期 |
1999.02.08 |
申请人 |
THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK |
发明人 |
LEVY, MIGUEL;OSGOOD, RICHARD, M., JR. |
分类号 |
C30B33/08;C30B33/00;H01L21/20;H01L21/265;H01L21/306;H01L21/762 |
主分类号 |
C30B33/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|