METHOD AND APPARATUS FOR PROCESSING PLASMA

摘要

PURPOSE: A method and an apparatus for processing plasma are provided to improve the uniformity of plasma density by obliquely installing a chamber lid on the upper side of a chamber in order to change energy for electrons in the plasma. CONSTITUTION: A chamber(110) provides a reaction space. A substrate supporting unit(120) is installed in the chamber and supports a semiconductor substrate(S). A gas spray unit(130) is installed on the upper side of the chamber and injects a process gas into the reaction space. A chamber lid(140) is obliquely installed on the upper side of the chamber and provides inductive magnetic field in the reaction space.