| 摘要 |
PURPOSE:To improve a cross modulation disturbance characteristic by grounding the source of a FET throught the parallel circuit of L and C in the high frequency amplifier circuit which can receives frequencies from UHF up to VHF. CONSTITUTION:Coil 19 and capacitor 18 are inserted in parallel between the source of FET 1 and the earth, and the parallel resonance frequency is placed between a VHF band and a UHF band. Then, an inductance property is given to the reactance characteristic between the source of FET 1 and the cross modulation disturbance characteristic of the VEF band at a gain attenuation time can be improved. |
