| 摘要 |
A solid-state imaging device is provided and includes: a semiconductor substrate; a plurality of photoelectric conversion elements arranged in a two-dimensional array in a surface portion of the semiconductor substrate; a conductive light shielding film above the surface portion, the conductive light shielding film having openings at a light-incident side of the respective photoelectric conversion elements; a connection pad formed in the semiconductor substrate and to be applied with a voltage from outside the solid-state imaging device; and a wiring that connects the connection pad and the conductive light shielding film, wherein the wiring has a wiring structure having a time constant smaller than that of one linear wiring.
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