| 摘要 |
A static random access memory at least includes: pluralities of transistors disposed on a substrate, each transistor at least includes a gate, a gate dielectric layer, a source doped region and a drain doped region, in which some of the source doped regions are used for connecting with a Vss voltage or a Vdd voltage, and a salicide layer disposed on the gates, the source doped regions except those source doped regions used for connecting a Vss voltage and a Vdd voltage and the drain doped regions.
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