| 摘要 |
PURPOSE: A high integrated semiconductor memory device is provided to improve a margin for detecting a data by expanding a contact to connect a source line and a cell unit and increasing the amount of current which flows through a unit cell. CONSTITUTION: Contacts with different shapes are formed on the both side of a word line in a cell array. A first contact plug(705a) is formed in the active region of a word line. A bit line contact(708) is connected to the first contact plug. A second contact plug(705b) is formed on the other side of the word line. An adjacent cell unit shares the second contact plug. A source line contact(706) is connected to the second contact plug. The adjacent cell unit shares the source line contact. A source line(707) is formed on the upper side of the source line contact.
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