| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent ions from implanting onto the upper side of an active region by performing the ion implantation process after a nitride layer is deposited on the active region and etching process are performed. CONSTITUTION: An active region(200) is defined on an element isolation layer(220). An oxide layer(230) is formed on the upper side of a semiconductor substrate which includes the element isolation layer. An ion barrier layer(250) is formed on the upper side of the oxide layer. An active region is etched to form a recess. A saddle type pin transistor is formed. An inclined ion implantation for the recess is performed. The element isolation layer and the sidewall of the recess, which are contaminated by the ion implantation process, are additionally etched to form a saddle type pin region.
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