发明名称 |
CIRCUIT FOR DRIVING BITLINE SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING DRIVER FOR BITLINE SENSE AMPLIFIER |
摘要 |
PURPOSE: A bit line sense amplifier driving circuit of a semiconductor memory device and a driving method of a bit line sense amplifier driving circuit are provided to reduce the peak current in a process of sensing a bit line by adjusting the size of a power driver according to an operating state. CONSTITUTION: A first sense amplifier driving circuit(210) drives a bit line sense amplifier. A second sense amplifier driving circuit(220) drives a bit line sense amplifier. All of the first sense driving circuits out of the first and second sense amplifier driving circuits operate in response to the operation state of a semiconductor memory device. The first and second sensing control circuits(230, 240) control the on/off state of the first sense amplifier driving circuit. |
申请公布号 |
KR20100048612(A) |
申请公布日期 |
2010.05.11 |
申请号 |
KR20080107860 |
申请日期 |
2008.10.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG, SUNG YUB |
分类号 |
G11C7/06;G11C7/12 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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