发明名称 CIRCUIT FOR DRIVING BITLINE SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING DRIVER FOR BITLINE SENSE AMPLIFIER
摘要 PURPOSE: A bit line sense amplifier driving circuit of a semiconductor memory device and a driving method of a bit line sense amplifier driving circuit are provided to reduce the peak current in a process of sensing a bit line by adjusting the size of a power driver according to an operating state. CONSTITUTION: A first sense amplifier driving circuit(210) drives a bit line sense amplifier. A second sense amplifier driving circuit(220) drives a bit line sense amplifier. All of the first sense driving circuits out of the first and second sense amplifier driving circuits operate in response to the operation state of a semiconductor memory device. The first and second sensing control circuits(230, 240) control the on/off state of the first sense amplifier driving circuit.
申请公布号 KR20100048612(A) 申请公布日期 2010.05.11
申请号 KR20080107860 申请日期 2008.10.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JANG, SUNG YUB
分类号 G11C7/06;G11C7/12 主分类号 G11C7/06
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