发明名称 |
Method of fabricating static random access memory |
摘要 |
A method of fabricating a static random access memory device includes selectively removing an insulating film and growing a single crystalline silicon layer using selective epitaxy growth, the single crystalline silicon layer being grown in a portion from which the insulating film is removed; recessing the insulating film; and depositing an amorphous silicon layer on the single crystalline silicon layer and the insulating film, such that the amorphous silicon layer partially surrounds a top surface and side surfaces of the single crystalline silicon layer.
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申请公布号 |
US7598141(B2) |
申请公布日期 |
2009.10.06 |
申请号 |
US20050261266 |
申请日期 |
2005.10.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-HOON;PARK SANG-JIN;YOO WON-SEOK;LEE KONG-SOO |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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