发明名称 |
Infrared solid-state image pickup apparatus and a production method thereof |
摘要 |
An infrared solid-state image pickup apparatus includes an SOI substrate having a silicon oxide film layer and an SOI layer on a silicon substrate, a detecting portion which is provided with a PN junction diode formed on the SOI substrate and converts a temperature change generated by an incident infrared ray to an electric signal, and a support that holds the detecting portion with a space from the silicon substrate of the SOI substrate. An impurity in a semiconductor layer constituting the PN junction diode is distributed such that carriers flowing in the semiconductor layer are distributed in such an uneven manner as being much in a central portion of the semiconductor layer than in a peripheral portion thereof.
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申请公布号 |
US7598584(B2) |
申请公布日期 |
2009.10.06 |
申请号 |
US20060330259 |
申请日期 |
2006.01.12 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OHTA YASUAKI;UENO MASASHI |
分类号 |
H01L31/058 |
主分类号 |
H01L31/058 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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