发明名称 |
Silicided polysilicon spacer for enhanced contact area |
摘要 |
An integrated circuit device having an increased source/drain contact area by a formed silicided polysilicon spacer. The polysilicon sidewall spacer is formed having a height less than seventy percent of said gate conductor height, and having a continuous surface silicide layer over the deep source and drain regions. The contact area is enhanced by the silicided polysilicon spacer.
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申请公布号 |
US7598572(B2) |
申请公布日期 |
2009.10.06 |
申请号 |
US20060552673 |
申请日期 |
2006.10.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;SAMSUNG ELECTRONIC CO., LTD (CORPORATION);CHARTERED SEMICONDUCTOR MANUFACTURING LTD (CORPORATION) |
发明人 |
DYER THOMAS W.;FANG SUNFEI;KU JA-HUM;LEE YONG MENG |
分类号 |
H01L29/40 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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