发明名称 CMOS image sensor and method of driving the same
摘要 A complementary metal-oxide semiconductor (CMOS) image sensor and a method of driving the CMOS image sensor that can reduce the number of devices required by each of a plurality of pixels and can stably drive the pixels, in which each of the pixels includes a photodiode that converts light energy into an electrical signal, a transfer transistor that transmits photocarriers stored in the photodiode to a floating diffusing region, a drive transistor that has a gate connected to the floating diffusion region and drives a voltage signal according to a voltage of the floating diffusion region, the voltage signal being output to an external device, and a capacitive device that is connected between a control voltage source and the floating diffusion region and, when a sensing operation of a corresponding pixel is terminated, deselects the pixel by altering the voltage of the floating diffusion region according to a control voltage provided by the control voltage source.
申请公布号 US7598481(B2) 申请公布日期 2009.10.06
申请号 US20070679319 申请日期 2007.02.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG SUNG-IN;LEE YONG-JEI;AHN JUNG-CHAK;KO JU-HYUN
分类号 G01J1/44;H01L27/00 主分类号 G01J1/44
代理机构 代理人
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