| 摘要 |
PURPOSE: A fuse of a semiconductor device and a method for forming the same are provided to improve production yield of a semiconductor device by suppressing a defect of contact between metal lines causing oxidation of TiN. CONSTITUTION: A fuse of a semiconductor device includes a barrier film(108), a metal layer(110), and an anti oxidation layer(122). The barrier film is formed on the semiconductor substrate(100). The barrier film has one of a single structure of TiN or laminating structure of TiN and Ti. A metal layer is formed on the barrier film, and the anti oxidation layer is formed on the surface of the metal layer and barrier film.
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