| 摘要 |
PURPOSE: A method of fabricating a photomask using a polymer is provided to prevent unevenness of a coating, the pattern defect by patterning using etching rate difference. CONSTITUTION: A method of fabricating a photomask using a polymer is comprise of the steps: a light shield layer(110) is formed on a transparent substrate(100) having a first area(101) and a second part(102); a hard mask film(120) is formed on the light shield layer; the first polymer layers made of singe polymer complementary combination is formed a hard mask film; a part of the first polymer at a first region is changed into a second complementary; and a hard mask film pattern exposing the light shield layer of the first polymer layer lower part is formed by etching the first and the second polymer layer with ratio difference. |
