发明名称 |
Method of suppressing diffusion in a semiconductor device |
摘要 |
An impurity-diffused layer having an extension structure is formed first by implanting Sb ion as an impurity for forming a pocket region; then by implanting N as a diffusion-suppressive substance so as to produce two peaks in the vicinity of the interface with a gate electrode and at an amorphous/crystal interface which serves as an defect interface generated by the impurity in the pocket region; and by carrying out ion implantations for forming an extension region and deep source and drain regions.
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申请公布号 |
US7592243(B2) |
申请公布日期 |
2009.09.22 |
申请号 |
US20050260464 |
申请日期 |
2005.10.28 |
申请人 |
FUJITSU MICROELECTRONICS LIMITED |
发明人 |
MOMIYAMA YOUICHI;OKABE KENICHI;SAIKI TAKASHI;FUKUTOME HIDENOBU |
分类号 |
H01L21/425;H01L21/265;H01L21/336;H01L21/8238;H01L27/092;H01L29/78 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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