MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING SPACER PATTERNING TECHNOLOGY

摘要

A method for manufacturing a semiconductor device using a spacer patterning process is provided to prevent a photoresist scum by forming the photoresist pattern containing Si in an upper part after coating a spin on carbon layer on the spacer pattern. A first mask layer(112) and a second mask layer(114) are deposited in an upper part of an etched layer of a semiconductor substrate(110). A first photo resist pattern is formed in an upper part of a second mask layer by a lithography process. A second mask pattern is formed by patterning the second mask layer using a first photoresist pattern. A spacer is formed in a sidewall of a second mask pattern. A spacer pattern(132') is formed by removing the second mask pattern. A second photoresist pattern exposing the spacer pattern section is formed in the front surface including the spacer pattern.