| 摘要 |
A method of manufacturing a semiconductor device, wherein an interlayer insulating layer, a lower barrier metal layer, a metal layer having a low resisvitity value, an upper barrier metal layer, a first oxynitride layer, a hard mask layer formed at low temperature, a second oxynitride layer, and an organic Bottom Anti-Reflective Coating (BARC) layer are formed over a semiconductor substrate. The BARC layer, the second oxynitride layer, and the hard mask layer are etched. The first oxynitride layer, the upper barrier metal layer, the metal layer, and the lower barrier metal layer are etched using the hard mask layer as a mask.
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