METHOD FOR FABRICATION OF ZNO TFT

摘要

A manufacturing method of a ZnO TFT is provided to reduce a defect inside a semiconductor thin film by controlling a deposition temperature after selecting oxygen plasma or ozone as oxygen precursor. A ZnO semiconductor film(30) is formed on a substrate(10) through an atomic layer deposition method using Zn precursor and ozone at a temperature of 250~350°C or Zn precursor and oxygen plasma at a temperature of 150~250°C. An insulation film(40) is formed on a top part of the ZnO semiconductor film through the atomic layer deposition method using the oxygen precursor selected from ozone or water at a temperature less than 250°C. A gate electrode(50) is formed on a top part of the insulation film. The ZnO semiconductor film has thickness of 5~40nm. The substrate is a substrate in which a source/drain electrode(20) is formed and a substrate in which the gate electrode and the insulation film are formed.