发明名称 |
Integrated circuit arrangement with NPN and PNP bipolar transistors and corresponding production method |
摘要 |
An integrated circuit arrangement and fabrication method is provided. The integrated circuit arrangement contains an NPN transistor and a PNP transistor. The PNP transistor contains an emitter connection region and a cutout. The cutout delimits the width of the emitter connection region. The electrically conductive material of the connection region laterally overlaps the cutout.
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申请公布号 |
US7592648(B2) |
申请公布日期 |
2009.09.22 |
申请号 |
US20050295706 |
申请日期 |
2005.12.06 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BOETTNER THOMAS;DREXL STEFAN;HUTTNER THOMAS;SECK MARTIN |
分类号 |
H01L31/072;H01L21/8228;H01L27/082 |
主分类号 |
H01L31/072 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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