发明名称 Method and apparatus for surface potential reflection electron mask lithography
摘要 A method (and structure) for controlling a beam used to generate a pattern on a target surface includes generating a beam of charged particles and directing the beam to a mask surface and causing the beam to be either absorbed by or reflected from the mask surface, thereby either precluding or allowing the beam to strike the target surface, based on a reflection characteristic of the mask surface.
申请公布号 US7592612(B2) 申请公布日期 2009.09.22
申请号 US20080027614 申请日期 2008.02.07
申请人 INTERNATIONAL BUSINESS MACHIENS CORPORATION 发明人 TROMP RUDOLF M.
分类号 G21K5/10;G03F9/00;G21K1/093;H01J37/317 主分类号 G21K5/10
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