发明名称 Low noise sense amplifier array and method for nonvolatile memory
摘要 In sensing a page of nonvolatile memory cells with a corresponding group of sense modules in parallel, as each high current cell is identified, it is locked out from further sensing while others in the page continued to be sensed. The sense module involved in the locked out is then in a lockout mode and becomes inactive. A noise source from the sense module becomes significant when in the lockout mode. The noise is liable to interfere with the sensing of neighboring cells by coupling through its bit line to neighboring ones. The noise can also couple through the common source line of the page to affect the accuracy of ongoing sensing of the cells in the page. Improved sense modules and method isolate the noise from the lockout sense module from affecting the other sense modules still active in sensing memory cell in the page.
申请公布号 US7593265(B2) 申请公布日期 2009.09.22
申请号 US20070966325 申请日期 2007.12.28
申请人 SANDISK CORPORATION 发明人 NGUYEN HAO THAI;MUI MAN LUNG;LEE SEUNGPIL
分类号 G11C16/26 主分类号 G11C16/26
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